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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specification isc w ebsite 1 isc n - c hanne l m osfet t ransistor 2SK1974 description drain current i d = 10 a@ t c =25 drain source voltage - : v dss = 6 0 v(min) fast switching speed applications switching application absolute maximum rat ings(t a =25 symbol p arameter value unit v dss drain - s ource v oltage (v gs =0) 6 0 v v gs gate - s ource v oltage 2 0 v i d drain current - continuous@ t c =25 10 a p tot total dissipation@t c =25 3 0 w t j max. operating junction t emper ature 150 t stg storage t emperature range - 5 5~150
i nchange semiconductor isc product specification isc w ebsite 2 isc n - c hanne l m osfet t ransistor 2sk 1974 c =25 symbol parameter conditions min type max unit v (br)dss drain - s ource b reakdown v olta ge v gs = 0; i d = 1m a 6 0 v v gs ( th ) gate t hreshold v oltage v ds = 10v ; i d = 1 ma 2 .0 4 .0 v r ds( on ) drain - s ource o n - r esistance v gs = 10v; i d = 1 a 0.35 i gss gate - body l eakage c urrent v gs = 30 v;v ds = 0 1 00 na i dss zero g ate v oltage d rain c urrent v ds = 6 0v; v gs = 0 100 a c iss input capacitance v ds =10 v; v gs =0v; f t =1mhz 1400 pf c rss reverse transfer capacitance 150 c oss output capacitance 600 t r rise time v gs =10v; i d = 5a; v dd =3 0v; r l = 6 80 ns t d( on ) turn - on delay t ime 30 t f fall t ime 6 0 t d( of f) turn - off delay t ime 60 |
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